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Silicon / Compound Semiconductor Based High Power Pulsed Laser Diode
Silicon / Compound Semiconductor Based High Power Pulsed Laser Diode
- Date Posted: 2024-10-14 12:41 From English Site
- Valid to:2024-12-30
- Purchase Quantity: 10000 Piece(s)
- Trade Terms:FOB
- Payment Terms:T/T
- Sourcing Request From:Request From: India
- Shipping Method:Sea freight
Quote Left:
8
Material: GaAs. InGaAs, Laser Diode Pulsed Laser Diode, Peak Power: 500 Watts, Wavelength 905nm, Spectral BW 7nm, Beam Spread 10o Degrees, Number of elements, 2 X (4 X 3), Emitting Area 800 X 300 um, Max Pulse Duration 150 ns
Quotation Record 2 supplier(s) have provided quotations. Only 8 quoting chance(s) left!
| Company Name | Business Type | Location | Quote Time |
|---|---|---|---|
Sh******
|
Manufacturer/Factory | Shanghai, Shanghai | 2024-10-20 11:58 |
|
Su******
|
Manufacturer/Factory | Suzhou, Jiangsu | 2024-10-15 15:28 |